| PART |
Description |
Maker |
| CAT64LC40ZJ CAT64LC40ZS CAT64LC40J-TE7 CAT64LC40J- |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit QDR™-II SRAM 4-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL™ Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
72-Mbit QDR-II™ SRAM 2-Word Burst Architecture SPI串行EEPROM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
|
Analog Devices, Inc.
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| R1Q2A3636ABG60RB0 R1Q3A3636ABG60RB0 R1Q4A3636ABG60 |
36-Mbit QDR⑩II SRAM 2-word Burst
36-Mbit QDR垄芒II SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| CY7C1314BV18 CY7C1312BV18 |
18-Mbit QDR庐 II SRAM Two-Word Burst Architecture
18-Mbit QDR? II SRAM Two-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1515V18-250BZC CY7C1526V18 CY7C1526V18-167BZC |
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture
72-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
72-Mbit QDR?II SRAM 4-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
| R1Q4A3609ABG40RS0 R1Q6A3609ABG40RS0 R1Q3A3609ABG40 |
1M X 36 QDR SRAM, PBGA165
1M X 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDR?II SRAM 2-word Burst
36-Mbit QDR?⑸I SRAM 2-word Burst
36-Mbit QDR垄芒II SRAM 2-word Burst
|
http://
Renesas Electronics Corporation
|
| CY7C1518JV18-250BZC CY7C1518JV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| R1Q2A3609 R1Q2A3636 R1Q2A3618 R1Q2A3609ABG-60R R1Q |
36-Mbit QDR™II SRAM 2-word Burst
36-Mbit QDR™II SRAM 2-word Burst
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| R1Q3A3618 R1Q3A3636 R1Q3A3609 R1Q3A3609ABG-60R R1Q |
36-Mbit QDR™II SRAM 4-word Burst
36-Mbit QDR™II SRAM 4-word Burst
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
